Spin polarization and magneto-Coulomb oscillations in ferromagnetic single electron devicesONO, K; SHIMADA, H; OOTUKA, Y et al.Journal of the Physical Society of Japan. 1998, Vol 67, Num 8, pp 2852-2856, issn 0031-9015Article

Oscillatory bohm trajectories in resonant tunneling structuresORIOLS, X; MARTIN, F; SUNE, J et al.Solid state communications. 1996, Vol 99, Num 2, pp 123-128, issn 0038-1098Article

Proton implantation of Al_xGa_1-xAs/GaAs resonant-tunnelling diode structuresBILLEN, K; KELLY, M. J; HUTCHINSON, S. V et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 376-381, issn 0921-5107Conference Paper

The study of GaAs/InGaAs δ-doping resonant interband tunneling diodeYANG, C. C; HUANG, K. C; SU, Y. K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 259-262, issn 0921-5107Conference Paper

A novel approach in fabrication and study of laterally quantum-confined resonant tunnelling diodesJIANNONG WANG; BETON, P. H; MORI, N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 192-197, issn 0921-5107Conference Paper

Reproducible growth and application of AlAs/GaAs double barrier resonant tunneling diodesMARS, D. E; YANG, L; TAN, M. R. T et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 965-968, issn 1071-1023Conference Paper

The effect of interface quality on Si/SiO₂ resonant tunnel diodesSANDU, T; LAKE, R; KIRK, W. P et al.Superlattices and microstructures. 2001, Vol 30, Num 4, pp 201-204, issn 0749-6036Article

Terahertz response of resonant tunneling diodesSCOTT, J. S; KAMINSKI, J. P; ALLEN, S. J et al.Surface science. 1994, Vol 305, Num 1-3, pp 389-392, issn 0039-6028Conference Paper

Spin accumulation in ferromagnetic-superconductor-ferromagnetic double-barrier junctionsCHEN, C. D; KUO, Watson; CHUNG, D. S et al.Journal of magnetism and magnetic materials. 2002, Vol 239, Num 1-3, pp 141-144, issn 0304-8853Conference Paper

Resonant tunnelling diodes operating as modern quantum transport devicesFÖRSTER, A.SPIE proceedings series. 2000, pp 966-973, isbn 0-8194-3601-1Conference Paper

A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfetGRADO-CAFFARO, M. A; GRADO-CAFFARO, M.EPJ. Applied physics (Print). 1999, Vol 5, Num 1, pp 1-2, issn 1286-0042Article

Modulation characteristics of AlAs/GaAs double barrier quantum well resonant tunneling structure at microwave frequenciesCHU, H. Y; PARK, P. W; LEE, E. H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 446-448, issn 0921-5107Conference Paper

Importance of complex band structure and resonant states for tunnelingDEDERICHS, P. H; MAVROPOULOS, Ph; WUNNICKE, O et al.Journal of magnetism and magnetic materials. 2002, Vol 240, Num 1-3, pp 108-113, issn 0304-8853Conference Paper

Area-selective regrowth followed by AsH₃ surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctionsOHNO, Takeo; OYAMA, Yutaka; TEZUKA, Kenji et al.Applied surface science. 2003, Vol 216, Num 1-4, pp 549-553, issn 0169-4332, 5 p.Conference Paper

Combination of antiferromagnetically coupled Co/Cu/Co trilayers and magnetic tunnel junctionsLUCINSKI, T; BRÜCKL, H; JUSTUS, M et al.Journal of magnetism and magnetic materials. 2002, Vol 239, Num 1-3, pp 138-140, issn 0304-8853Conference Paper

Theoretical study of the relation between interfacial imperfection and transport properties in magnetic tunnel junctionsSTOEFFLER, Daniel.Journal of magnetism and magnetic materials. 2002, Vol 240, Num 1-3, pp 114-116, issn 0304-8853Conference Paper

NaCl/Ca/Al as an efficient cathode in organic light-emitting devicesSHENGWEI SHI; DONGGE MA.Applied surface science. 2006, Vol 252, Num 18, pp 6337-6341, issn 0169-4332, 5 p.Article

Influence of H₂O molecules on sub-nanometre scale gaps between Au leadsKOROTKOV, A. L; BOWMAN, M; MCGUINNESS, H. J et al.Nanotechnology (Bristol. Print). 2003, Vol 14, Num 1, pp 42-45, issn 0957-4484, 4 p.Article

Computer simulation of switching characteristics in magnetic tunnel junctions exchange-biased by synthetic antiferromagnetsUHM, Y. R; LIM, S. H.Journal of magnetism and magnetic materials. 2002, Vol 239, Num 1-3, pp 123-125, issn 0304-8853Conference Paper

Temperature dependence of transport properties in ZnS-based magnetic tunnel junctionsGUTH, M; SCHMERBER, G; HENRY, Y et al.Journal of magnetism and magnetic materials. 2002, Vol 240, Num 1-3, pp 152-155, issn 0304-8853Conference Paper

Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal annealLEE, K. I; LEE, J. H; LEE, W. Y et al.Journal of magnetism and magnetic materials. 2002, Vol 239, Num 1-3, pp 120-122, issn 0304-8853Conference Paper

Magnetic tunneling junctions with an inserted ferromagnetic metal spacerCHEN, Sui-Pin; CHANG, Ching-Ray.Journal of magnetism and magnetic materials. 2002, Vol 239, Num 1-3, pp 132-134, issn 0304-8853Conference Paper

Temperature dependence of the tunneling magnetoresistance for tunnel junctionsLEE, J. H; CHANG, In-Woo; BYUN, S. J et al.Journal of magnetism and magnetic materials. 2002, Vol 240, Num 1-3, pp 149-151, issn 0304-8853Conference Paper

Wigner-function approach to multiband transport in semiconductorsDEMEIO, Lucio; BARLETTI, Luigi; BERTONI, Andrea et al.Physica. B, Condensed matter. 2002, Vol 314, Num 1-4, pp 104-107, issn 0921-4526Conference Paper

Magnetoresistance study in Ni-Al-Ni and Al-Ni-Al tunneling junction systemsCHEN, C. D; YAO, Y. D; LEE, S. F et al.Journal of magnetism and magnetic materials. 2002, Vol 239, Num 1-3, pp 112-115, issn 0304-8853Conference Paper